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| HMICTM Silicon Beam-Lead PIN Diodes Features * * * * * * * * * * * Beam-Lead Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch and Impact Protection Low Parasitic Capacitance and Inductance Ultra Low Capacitance < 40 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 110 Nanosecond Minority Carrier Lifetime Driven by Standard +5V TTL PIN Diode Driver MA4PBL027 V1 Case Style ODS-1302 Cathode A F D B Description and Applications This device is a Silicon-Glass Beam-Lead PIN diode fabricated with M/A-COM's patented HMICTM process. This device features one silicon pedestal embedded in a low loss, low dispersion glass which supports the beam-leads. The diode is formed on the top of the pedestal, and airbridges connect the diode to the beam-leads. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the air-bridges during handling and assembly. The diodes themselves exhibit low series resistance, low capacitance, and extremely fast switching speed. The ultra low capacitance of this device allows use through W-band (110 GHz) applications. The low RC product and low profile of the PIN diodes makes it ideal for use in microwave and millimeter wave switch designs, where lower insertion loss and higher isolation are required. The + 10 mA ( low loss state ) and the 0v ( isolation state ) bias of the diodes allows the use a simple + 5V TTL gate driver. These diodes are used as switching arrays on radar systems, high-speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. side Dimension A B C D E F E top Mils 9.3 +/- 2.0 15.3 +/- 2.0 9.3 +/- 2.0 12.6 +/- 2.0 5.5 +/- 2.0 5.0 +/- 1.0 C mm 0.24 +/- 0.05 0.39 +/- 0.05 0.24 +/- 0.05 0.32 +/- 0.05 0.14 +/- 0.05 0.13 +/- 0.03 Absolute Maximum Ratings @ TA = +25 C (unless otherwise specified)1 Parameter Forward Current Reverse Voltage Operating Temperature Storage Temperature JunctionTemperature RF C.W. Incident Power RF & DC Dissipated Power Mounting Temperature Maximum Rating 100 mA 90 V -55 C to +125 C -55 C to +150 C +175 C 30 dBm C.W. 150 mW +235C for 10 sec. 1. Operation of this device above any one of these parameters may cause permanent damage. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. HMICTM Silicon Beam-Lead PIN Diodes MA4PBL027 V1 Electrical Specifications at +25 C Symbol CT CT CT CT CT CT CT CT CT CT CT CT RS RS RS RS VF VR IR IR TL NOTES: 2. Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar. 3. Series resistance RS is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) 4. Rs and C T are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with conductive silver epoxy. Conditions 0 V, 1 MHz2 -3 V, 1 MHz2 -10 V, 1 MHz2 -40 V, 1 MHz2 0 V, 100 MHz 2,4 Units pF pF pF pF pF pF pF pF pF pF pF pF V V nA uA ns Typ. 0.048 0.039 0.033 0.030 0.043 0.033 0.031 0.027 0.039 0.032 0.029 0.026 3.8 3.0 3.5 2.8 0.917 110 1.0 110 Max. 0.040 0.040 -3 V, 100 MHz2,4 -10V, 100 MHz 2,4 -40V, 100 MHz2,4 0 V, 1 GHz 2,4 -3 V, 1 GHz2,4 -10 V, 1 GHz2,4 -40 V, 1 GHz2,4 10 mA, 100 MHz3,4 20 mA, 100 MHz 3,4 10 mA, 1 GHz3,4 20 mA, 1 GHz 20 mA -10 A -40 V -90 V +10 mA / -6 mA 3,4 1.1 10.0 Die Handling All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. Bulk handling should insure that abrasion and mechanical shock are minimized. Die Bonding These devices were designed to be inserted onto hard or soft substrates. Recommended methods of attachment include thermocompression bonding, parallel-gap welding, and electrically conductive silver epoxy. See Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices" for More Detailed Assembly Instructions. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. HMICTM Silicon Beam-Lead PIN Diodes MA4PBL027 V1 Typical Performance Curves @ +25C Total Capacitance Ct vs V 6.0E-14 Total Capacitance Ct vs Freq 6.0E-14 5.0E-14 5.0E-14 4.0E-14 4.0E-14 0V 5V Ct (F) Ct (F) 3.0E-14 100MHz 1GHz 3.0E-14 40V 2.0E-14 2.0E-14 1.0E-14 1.0E-14 0.0E+00 0 5 10 15 20 Bias (V) 25 30 35 40 0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Freq (Hz) Parallel Resistance Rp vs V 1E+07 Series Resistance Rs vs F 14 100MHz 1E+06 12 1mA 1E+05 10 1GHz Rp (ohm) Rs (ohm) 1E+04 8 1E+03 6 10mA 1E+02 4 1E+01 2 100mA 1E+00 0 5 10 15 20 Bias (V) 25 30 35 40 0 0.0E+0 1.0E+8 2.0E+8 3.0E+8 4.0E+8 5.0E+8 Freq (Hz) 6.0E+8 7.0E+8 8.0E+8 9.0E+8 1.0E+9 Series Resistance Rs vs I 10 Series Inductance Ls vs Freq 1.4E-10 100mA 1.2E-10 1.0E-10 100MHz Rs (ohm) Ls (H) 8.0E-11 10mA 1GHz 6.0E-11 4.0E-11 2.0E-11 1 1.00E-03 1.00E-02 Bias (A) 1.00E-01 0.0E+00 0.0E+0 2.0E+8 4.0E+8 6.0E+8 8.0E+8 1.0E+9 1.2E+9 1.4E+9 1.6E+9 1.8E+9 2.0E+9 Freq (Hz) 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. HMICTM Silicon Beam-Lead PIN Diodes MA4PBL027 V1 MA4PBL027 SPICE Model PinDiodeModel NLPINM1 Is=1.0E-14 A Vi=0.0 V Un= 900 cm^2/V-sec Wi= 14 um Rr= 100 K Ohms Cjmin= 0.03 pF Tau= 110 nsec Rs(I)= Rc + Rj(I) = 0.05 Cj0= 0.04 pF Vj= 0.7 V M= 0.5 Fc= 0.5 Imax= 1.1E+5 A/m^2 Kf=0.0 Af=1.0 wBv= 90 V wPmax= 150 mW Ffe= 1.0 AllParams= Ohm + Rj(I) 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. HMICTM Silicon Beam-Lead PIN Diodes MA4PBL027 V1 MA4PBL027 Microwave Model C parasitic = 0.08 pF Rs Input Ls Output Cj Notes : CT(V) = Cj (V) + Cparasitic ( Reverse Bias State ) Rs( I ) = Rj ( I ) + Rc ( Forward Bias State ) Rs ( V ) = Rj ( V ) = Rp ( V ) ( Reverse Bias State ) 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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